? semiconductor components industries, llc, 2002 may, 2002 rev. 10 1 publication order number: 2N5883/d pnp 2N5883, 2n5884*, npn 2n5885, 2n5886* preferred device complementary silicon high-power transistors . . . designed for generalpurpose power amplifier and switching applications. ? low collectoremitter saturation voltage v ce(sat) = 1.0 vdc, (max) at i c = 15 adc ? low leakage current i cex = 1.0 madc (max) at rated voltage ? excellent dc current gain h fe = 20 (min) at i c = 10 adc ? high current gain bandwidth product f = 4.0 mhz (min) at i c = 1.0 adc ??????????????????? ??????????????????? maximum ratings (no ?????????? ?????????? rating ??? ??? symbol ???? ???? 2N5883 2n5885 ???? ???? 2n5884 2n5886 ?? ?? unit ?????????? ?????????? collectoremitter voltage ??? ??? v ceo ???? ???? 60 ???? ???? 80 ?? ?? vdc ?????????? ?????????? collectorbase voltage ??? ??? v cb ???? ???? 60 ???? ???? 80 ?? ?? vdc ?????????? ?????????? emitterbase voltage ??? ??? v eb ??????? ??????? 5.0 ?? ?? vdc ?????????? ? ???????? ? ?????????? collector current continuous peak ??? ? ? ? ??? i c ??????? ? ????? ? ??????? 25 50 ?? ? ? ?? adc ?????????? ?????????? base current ??? ??? i b ??????? ??????? 7.5 ?? ?? adc ?????????? ? ???????? ? ? ???????? ? ?????????? total device dissipation @ t c = 25 c derate above 25 c ??? ? ? ? ? ? ? ??? p d ??????? ? ????? ? ? ????? ? ??????? 200 1.15 ?? ? ? ? ? ?? watts w/ c ?????????? ?????????? operating and storage junction temperature range ??? ??? t j , t stg ??????? ??????? 65 to +200 ?? ?? c ??????????????????? ? ????????????????? ? ??????????????????? thermal characteristics ????????????? ????????????? characteristic ??? ??? symbol ???? ???? max ?? ?? unit ????????????? ????????????? thermal resistance, junction to case ??? ??? jc ???? ???? 0.875 ?? ?? c/w 1. indicates jedec registered data. units and conditions differ on some parameters and reregistration reflecting these changes has been requested. all above values most or exceed present jedec registered data. http://onsemi.com preferred devices are recommended choices for future use and best overall value. 25 ampere complementary silicon power transistors 60 80 v 200 w marking diagram case 107 to204aa (to3) xxxxxxxxxx ccccc awlyyww xx = specific device code a = assembly location wl = wafer lot yy = year ww = work week ccccc = non usa country code
pnp 2N5883, 2n5884*, npn 2n5885, 2n5886* http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? *electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ???? ???? min ??? ??? max ??? ??? unit ??????????????????????? ? ????????????????????? ? ??????????????????????? collectoremitter sustaining voltage (note 2) 2N5883, 2n5885 (i c = 200 madc, i b = 0) 2n5884, 2n5886 ???? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ???? 60 80 ??? ? ? ? ??? ??? ? ? ? ??? vdc ??????????????????????? ??????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) 2N5883, 2n5885 (v ce = 40 vdc, i b = 0) 2n5984, 2n5886 ???? ???? i ceo ???? ???? ??? ??? 2.0 2.0 ??? ??? madc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 60 vdc, v be(off) = 1.5 vdc) 2N5883, 2n5885 (v ce = 80 vdc, v be(off) = 1.5 vdc) 2n5884, 2n5886 (v ce = 60 vdc, v be(off) = 1.5 vdc, t c = 150 c) 2N5883, 2n5885 (v ce = 80 vdc, v be(off) = 1.5 vdc, t c = 150 c) 2n5884, 2n5886 ???? ? ?? ? ? ?? ? ? ?? ? ???? i cex ???? ? ?? ? ? ?? ? ? ?? ? ???? ??? ? ? ? ? ? ? ? ? ? ??? 1.0 1.0 10 10 ??? ? ? ? ? ? ? ? ? ? ??? madc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v cb = 60 vdc, i e = 0) 2N5883, 2n5885 (v cb = 80 vdc, i e = 0) 2n5884, 2n5886 ???? ? ?? ? ???? i cbo ???? ? ?? ? ???? ??? ? ? ? ??? 1.0 1.0 ??? ? ? ? ??? madc ??????????????????????? ??????????????????????? emitter cutoff current (v eb = 5.0 vdc, i c = 0) ???? ???? i ebo ???? ???? ??? ??? 1.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? dc current gain (note 2) (i c = 3.0 adc, v ce = 4.0 vdc) (i c = 10 adc, v ce = 4.0 vdc) (i c = 25 adc, v ce = 4.0 vdc) ???? ? ?? ? ? ?? ? ???? h fe ???? ? ?? ? ? ?? ? ???? 35 20 4.0 ??? ? ? ? ? ? ? ??? 100 ??? ? ? ? ? ? ? ??? ??????????????????????? ??????????????????????? collectoremitter saturation voltage (note 2) (i c = 15 adc, i b = 1.5 adc) (i c = 25 adc, i b = 6.25 adc) ???? ???? v ce(sat) ???? ???? ??? ??? 1.0 4.0 ??? ??? vdc ??????????????????????? ??????????????????????? baseemitter saturation voltage (note 2) (i c = 25 adc, i b = 6.25 adc) ???? ???? v be(sat) ???? ???? ??? ??? 2.5 ??? ??? vdc ??????????????????????? ??????????????????????? baseemitter on voltage (note 2) (i c = 10 adc, v ce = 4.0 vdc) ???? ???? v be(on) ???? ???? ??? ??? 1.5 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? currentgain bandwidth product (note 3) (i c = 1.0 adc, v ce = 10 vdc, f test = 1.0 mhz) ???? ???? f t ???? ???? 4.0 ??? ??? ??? ??? mhz ??????????????????????? ? ????????????????????? ? ??????????????????????? output capacitance 2N5883, 2n5884 (v cb = 10 vdc, i e = 0, f = 1.0 mhz) 2n5885, 2n5886 ???? ? ?? ? ???? c ob ???? ? ?? ? ???? ??? ? ? ? ??? 1000 500 ??? ? ? ? ??? pf ??????????????????????? ??????????????????????? smallsignal current gain (i c = 3.0 adc, v ce = 4.0 vdc, f test = 1.0 khz) ???? ???? h fe ???? ???? 20 ??? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics ??????????? ??????????? rise time ????????????? ????????????? (v 30 vd i 10 ad ???? ???? t r ???? ???? ??? ??? 0.7 ??? ??? s ??????????? ??????????? storage time ????????????? ????????????? (v cc = 30 vdc, i c = 10 adc, i b1 =i b2 = 1 0 adc) ???? ???? t s ???? ???? ??? ??? 1.0 ??? ??? s ??????????? ??????????? fall time ????????????? ????????????? i b1 = i b2 = 1 . 0 ad c ) ???? ???? t f ???? ???? ??? ??? 0.8 ??? ??? s *indicates jedec registered data. 2. pulse test: pulse width 300 s, duty cycle 2.0%. 3. f t = |h fe | ? f test . 200 0 0 25 50 75 100 125 150 200 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts) 175 100 75 50 125 150 25 175
pnp 2N5883, 2n5884*, npn 2n5885, 2n5886* http://onsemi.com 3 figure 2. switching time equivalent test circuits 2.0 0.3 figure 3. turnon time i c , collector current (amperes) t, time (s) m 1.0 0.5 0.2 0.07 0.05 0.02 0.5 0.7 1.0 2.0 3.0 5.0 7.0 30 t j = 25 c i c /i b = 10 v cc = 30 v v be(off) = 2 v 0.03 0.3 20 0.1 10 2N5883, 2n5884 (pnp) 2n5885, 2n5886 (npn) t r t d 0.7 +2.0 v 0 t r 20ns -11v 10 to 100 s duty cycle 2.0% r b r l v cc -30 v to scope t r 20 ns v cc -30 v to scope t r 20 ns r l r b +9.0v 0 -11v 10 to 100 s duty cycle 2.0% t r 20ns v bb +7.0 v 3.0 10 3.0 10 turnon time turnoff time for curves of figures 3 & 6, r b & r l are varied. input levels are approximately as shown. for npn, reverse all polarities.
pnp 2N5883, 2n5884*, npn 2n5885, 2n5886* http://onsemi.com 4 figure 4. thermal response t, time (ms) 1.0 0.01 0.02 0.5 0.2 0.1 0.05 0.02 r(t), effective transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000 500 jc (t) = r(t) jc jc = 0.875 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 single pulse 0.1 1000 0.01 100 1.0 figure 5. activeregion safe operating area v ce , collector-emitter voltage (volts) 50 20 10 5.0 0.1 2.0 3.0 7.0 10 20 30 50 10 0 second breakdown limited bonding wire limited thermal limitation @ t c = 25 c (single pulse) 70 2.0 i c , collector current (amperes) t j = 200 c curves apply below rated v ceo dc 500 s 1ms 1.0 0.5 0.2 5.0 2N5883, 2n5885 2n5884, 2n5886 5ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 200 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 200 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 0.3 figure 6. turnoff time i c , collector current (amperes) 5.0 3.0 0.7 0.5 0.1 0.5 0.7 1.0 2.0 5.0 10 30 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 0.2 t, time (s) m t s 3.0 3000 0.1 figure 7. capacitance v r , reverse voltage (volts) 300 2.0 5.0 10 20 100 50 0.2 0.5 1.0 c, capacitance (pf) 2000 700 500 t j = 25 c c ib c ob 1.0 7.0 20 1000 7.0 2N5883, 2n5884 (pnp) 2n5885, 2n5886 (npn) t f c ib c ob t s t f 2.0 0.3 2N5883, 2n5884 (pnp) 2n5885, 2n5886 (npn)
pnp 2N5883, 2n5884*, npn 2n5885, 2n5886* http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 1000 0.3 figure 8. dc current gain i c , collector current (amperes) 10 0.5 0.7 1.0 3.0 5.0 7.0 10 30 70 30 20 100 50 h fe , dc current gain 200 300 v ce = 4.0 v 2.0 20 pnp devices 2N5883 and 2n5884 i c , collector current (amperes) h fe , dc current gain npn devices 2n5885 and 2n5886 2.0 0.01 i b , base current (amperes) 0 0.02 0.1 0.2 1.0 10 0.8 0.4 i c = 2.0 a t j = 25 c 5.0 a 1.2 1.6 0.05 0.5 10 a i b , collector current (amperes) t j = 25 c 2.0 0.3 i c , collector current (amperes) 0.5 0.7 1.0 2.0 3.0 7.0 10 30 1.6 1.2 0.8 0.4 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v , voltage (volts) 20 v be @ v ce = 4 v 5.0 i c , collector current (amperes) t j = 25 c v, voltage (volts) 700 500 t j = 150 c 25 c -55 c 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 30 2.0 20 v ce = 4.0 v t j = 150 c 25 c -55 c 2.0 5.0 20 a i c = 2.0 a 5.0 a 10 a 20 a 1000 10 70 30 20 100 50 200 300 700 500 2.0 0.01 0 0.02 0.1 0.2 1.0 10 0.8 0.4 1.2 1.6 0.05 0.5 2.0 5.0 2.0 0.3 0.5 0.7 1.0 2.0 3.0 7.0 10 30 1.6 1.2 0.8 0.4 0 20 5.0 v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 4 v figure 9. dc current gain figure 10. collector saturation region figure 11. collector saturation region figure 12. aono voltages figure 13. aono voltages
pnp 2N5883, 2n5884*, npn 2n5885, 2n5886* http://onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h case 107 to204aa (to3) issue z
pnp 2N5883, 2n5884*, npn 2n5885, 2n5886* http://onsemi.com 7 notes
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